Methods used in forming an array of elevationally-extending transistors

ABSTRACT

A method used in forming an array of elevationally-extending transistors comprises forming vertically-alternating tiers of insulating material and void space. Such method includes forming (a) individual longitudinally-aligned channel openings extending elevationally through the insulating-material tiers, and (b) horizontally-elongated trenches extending elevationally through the insulating-material tiers. The void-space tiers are filled with conductive material by flowing the conductive material or one or more precursors thereof through at least one of (a) and (b) to into the void-space tiers. After the filling, transistor channel material is formed in the individual channel openings along the insulating-material tiers and along the conductive material in the filled void-space tiers.

TECHNICAL FIELD

Embodiments disclosed herein pertain to methods of forming an array ofelevationally-extending transistors.

BACKGROUND

Memory is one type of integrated circuitry, and is used in computersystems for storing data. Memory may be fabricated in one or more arraysof individual memory cells. Memory cells may be written to, or readfrom, using digit lines (which may also be referred to as hit lines,data lines, or sense lines) and access lines (which may also be referredto as word lines). The sense lines may conductively interconnect memorycells along columns of the array, and the access lines may conductivelyinterconnect memory cells along rows of the array. Each memory cell maybe uniquely addressed through the combination of a sense line and anaccess line.

Memory cells may be volatile, semi-volatile, or non-volatile.Non-volatile memory cells can store data for extended periods of time inthe absence of power. Non-volatile memory is conventionally specified tobe memory having a retention time of at least about 10 years. Volatilememory dissipates, and is therefore refreshed/rewritten to maintain datastorage. Volatile memory may have a retention time of milliseconds orless. Regardless, memory cells are configured to retain or store memoryin at least two different selectable states. In a binary system, thestates are considered as either a “0” or a “1”. In other systems, atleast some individual memory cells may be configured to store more thantwo levels or states of information.

A field effect transistor is one type of electronic component that maybe used in a memory cell. These transistors comprise a pair ofconductive source/drain regions having a semiconductive channel regionthere-between. A conductive gate is adjacent the channel region andseparated there-from by a thin gate insulator. Application of a suitablevoltage to the gate allows current to flow from one of the source/drainregions to the other through the channel region. When the voltage isremoved from the gate, current is largely prevented from flowing throughthe channel region. Field effect transistors may also include additionalstructure, for example a reversibly programmable charge-storage regionas part of the gate construction between the gate insulator and theconductive gate.

Flash memory is one type of memory, and has numerous uses in moderncomputers and devices. For instance, modern personal computers may haveBIOS stored on a flash memory chip. As another example, it is becomingincreasingly common for computers and other devices to utilize flashmemory in solid state drives to replace conventional hard drives. As yetanother example, flash memory is popular in wireless electronic devicesbecause it enables manufacturers to support new communication protocolsas they become standardized, and to provide the ability to remotelyupgrade the devices for enhanced features.

NAND may be a basic architecture of integrated flash memory. A NAND cellunit comprises at least one selecting device coupled in series to aserial combination of memory cells (with the serial combination commonlybeing referred to as a NAND string). NAM) architecture may be configuredin a three-dimensional arrangement comprising vertically-stacked memorycells individually comprising a reversibly programmable verticaltransistor.

Vertical transistors may be formed in arrays not necessarilyconstituting memory cells.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagrammatic cross-sectional view of a substrateconstruction in process in accordance with an embodiment of theinvention, and is taken through line 1-1 in FIG. 2.

FIG. 2 is a diagrammatic cross-sectional view taken through line 2-2 inFIG. 1.

FIG. 3 is a view of the FIG. 1 construction at a processing stepsubsequent to that shown by FIG. 1, and is taken through line 3-3 inFIG. 4.

FIG. 4 is a view taken through line 4-4 in FIG. 3.

FIG. 5 is a view of the FIG. 3 construction at a processing stepsubsequent to that shown by FIG. 3.

FIG. 6 is a view of the FIG. 5 construction at a processing stepsubsequent to that shown by FIG. 5.

FIG. 7 is a view of the FIG. 6 construction at a processing stepsubsequent to that shown by FIG. 6.

FIG. 8 is a view of the FIG. 7 construction at a processing stepsubsequent to that shown by FIG. 7, and is taken through line 8-8 inFIG. 9.

FIG. 9 is a view taken through line 9-9 in FIG. 8.

FIG. 10 is a view of the FIG. 8 construction at a processing stepsubsequent to that shown by FIG. 8, and is taken through line 10-10 inFIG. 11.

FIG. 11 is a view taken through line 11-11 in FIG. 10.

FIG. 12 is a diagrammatic cross-sectional view of a substrateconstruction in process in accordance with an embodiment of theinvention.

FIG. 13 is a diagrammatic cross-sectional view of a substrateconstruction in process in accordance with an embodiment of theinvention, and is taken through line 13-13 in FIG. 14.

FIG. 14 is a diagrammatic cross-sectional view taken through line 14-14in FIG. 13.

FIG. 15 is a view of the FIG. 13 construction at a processing stepsubsequent to that shown by FIG. 13, and is taken through line 15-15 inFIG. 16.

FIG. 16 is a view taken through line 16-16 in FIG. 15.

FIG. 17 is a view of the FIG. 15 construction at a processing stepsubsequent to that shown by FIG. 15.

FIG. 18 is a diagrammatic cross-sectional view of a substrateconstruction in process in accordance with an embodiment of theinvention, and is taken through line 18-18 in FIG. 19.

FIG. 19 is a diagrammatic cross-sectional view taken through line 19-19in FIG. 18.

FIG. 20 is a view of the FIG. 18 construction at a processing stepsubsequent to that shown by FIG. 18, and is taken through line 20-20 inFIG. 21.

FIG. 21 is a view taken through line 21-21 in FIG. 20.

FIG. 22 is a view of the FIG. 20 construction at a processing stepsubsequent to that shown by FIG. 20.

FIG. 23 is a view of the FIG. 22 construction at a processing stepsubsequent to that shown by FIG. 22, and is taken through line 23-23 inFIG. 24.

FIG. 24 is a view taken through line 24-24 in FIG. 23.

FIG. 25 is a diagrammatic cross-sectional view of a substrateconstruction in process in accordance with an embodiment of theinvention, and is taken through line 25-25 in FIG. 26.

FIG. 26 is a diagrammatic cross-sectional view taken through line 26-26in FIG. 25.

DETAILED DESCRIPTION OF EXAMPLE EMBODIMENTS

Embodiments of the invention encompass methods used in forming an arrayof elevationally-extending transistors, for example as might be used inan array of memory circuitry comprising programmable charge-storagetransistors. A first example embodiment is shown in and described withreference to FIGS. 1-11.

Referring to FIGS. 1 and 2, a construction 10 comprises a base substrate11 that may include any one or more of conductive/conductor/conducting(i.e., electrically herein),semiconductive/semiconductor/semiconducting, orinsulative/insulator/insulating (i.e., electrically herein) materials.Various materials have been formed elevationally over base substrate 11.Materials may be aside, elevationally inward, or elevationally outwardof the FIGS. 1 and 2-depicted materials. For example, other partially orwholly fabricated components of integrated circuitry may be providedsomewhere above, about, or within base substrate 11. Control and/orother peripheral circuitry for operating components within an array oftransistors may also be fabricated, and may or may not be wholly orpartially within a transistor array or sub-array. Further, multiplesub-arrays may also be fabricated and operated independently, in tandem,or otherwise relative one another. As used in this document, a“sub-array” may also be considered as an array.

Vertically-alternating tiers 12 and 14 of different composition firstmaterial 16 and second material 18 have been formed relative to or abovebase substrate 11. Construction 10 is shown as having seventeenvertically-alternating tiers 12 and 14 in FIG. 1 although fewer orlikely many more (e.g., dozens, hundreds, etc.) may be formed.Accordingly, more tiers 12 and 14 may be below the depicted tiers andabove base substrate 11 and/or more tiers 12 and 14 may be above thedepicted tiers. First material 16 comprises insulative material as someor all of such remains in a finished construction of the array andelectrically isolates certain features elevationally between differenttiers 14. Second material 18 may be wholly sacrificial, and accordinglymay comprise any one or more of conductive, semiconductive, andinsulative materials. One example first material 16 is silicon dioxide,and one example second material 18 is silicon nitride. Such may beformed to be of the same or different thicknesses relative one another,and each need not be of the same respective thickness within the exampledepicted stack of materials 16, 18. Elevationally-extendingdummy-structure openings 20 have been formed into vertically-alternatingtiers 12 and 14. Such are optionally shown as being circular and of thesame size and shape relative one another. Such may be formed, by way ofexample only, by photolithographic pattering and etch with or withoutpitch multiplication.

Referring to FIGS. 3 and 4, solid material 22 (e.g., silicon dioxide)has been formed within dummy-structure openings 20 thereby forming dummystructures 24. In one embodiment, solid material 22 completely fillsdummy-structure openings 20, and in one embodiment forms dummystructures 24 to be completely-solid elevationally-extending pillars.Alternately and by way of example only, such may comprise a hollowelevationally-extending central portion (not shown). Dummy structures 24may comprise multiple different composition materials with aradially/laterally outermost portion thereof being insulative (e.g.,silicon dioxide).

Elevationally-extending channel openings 26 have been formed intovertically-alternating tiers 12 and 14, and in one embodiment afterforming dummy structures 24. Alternate processing may be conducted, forexample whereby the dummy-structure openings and channel openings areformed at the same time, then filled with solid material at the sametime, then masking of the dummy structures, and then the material withinchannel openings 26 removed therefrom. Regardless, in one embodiment,ratio of a total number of channel openings 26 to a total number ofdummy structures 24 is from 20:1 to 4:1. Channel openings 26 mayoptionally be of the same size and shape relative one another andoptionally of the same size and shape relative dummy-structure openings20.

Further, and by way of example only, the structure depicted by FIG. 4may be considered as forming rows 27 of channel openings 26 thatindividually are offset relative one another. In one embodiment, rows 27may be considered as comprising four channel openings 26 wherein, insome rows 27, a dummy structure 24 has been substituted for a channelopening 26 and/or an additional dummy structure 24 has been added (e.g.,one having been added in the first and sixth rows counting from the top,with one substitution occurring in the first, third, fourth, and seventhrows). Alternately, dummy structures 24 may not be substituted for achannel opening in any one or more channel-opening rows 27 (e.g., nosubstitution shown as having occurred in the second and sixth rows).Further, and regardless, dummy structures 24 and channel openings 26 maybe arrayed in respective periodic repeating patterns, or may not soarrayed as is shown with respect to each of dummy structures 24 andchannel openings 26 in FIG. 4.

Referring to FIG. 5, an etchant has been flowed into channel openings 26and which etches at least some (all being shown) of second material 18(not shown, due to it all having been removed) of second-material tiers14 and selectively relative to dummy structures 24. Such has therebyformed void space 28 elevationally between immediately-adjacentfirst-material tiers 12, and which in some embodiments may be consideredas void-space tiers 14. The etchant may be any suitable dry and/or wetetchant (including more than one etchant, regardless of whether wet ordry) that selectively etches material 18 relative to material 16. Wherematerial 18 is silicon nitride and material 16 and at least the radiallyoutermost portion of dummy structures 24 is silicon dioxide, an exampleetchant is H₃PO₄.

Referring to FIG. 6, void space 28 has been filled with conductivematerial 30 by flowing conductive material 30 (or one or more precursorsthereof) through channel openings 26 to into void space 28 with, in oneembodiment, conductive material 30 also being formed elevationally alongfirst-material tiers 12 within individual channel openings 26.Conductive material 30 may be formed by any suitable existing oryet-to-be-developed manner(s), for example physical vapor deposition,chemical vapor deposition, and/or atomic layer deposition. Exampleconductive materials 30 are metal materials and conductively-dopedsemiconductive materials, with two examples being tungsten andconductively-doped polysilicon. Where such is formed by chemical vapordeposition or atomic layer deposition, an example precursor for suchmaterials includes WF₆ and a suitable silane, respectively. In oneembodiment and as described and shown below, conductive material 30 mayform a control gate of a charge-storage transistor and comprise part ofan access line electrically coupling a row line or column line of suchtransistors.

Referring to FIG. 7, conductive material 30 has been removed (e.g., byany suitable dry anisotropic etch) from being elevationally alongfirst-material tiers 12 within individual channel openings 26.

Solid material comprising transistor channel material is ultimatelyformed in individual channel openings 26 along the insulating-materialtiers and along the conductive material in the filled void space afterremoving the conductive material within channel openings 26 as shown inFIG. 7. One example such embodiment is shown in FIGS. 8 and 9 forfabrication of charge-storage transistors. For example, and in oneembodiment, FIGS. 8 and 9 show deposition of a charge-blocking material32 (e.g., silicon dioxide and/or silicon nitride), a charge-storagematerial 33 (e.g., floating gate material [doped or undoped silicon,etc.] or charge-trapping material [silicon nitride, metal dots, etc.]),a charge-passage material 34 (e.g., a bandgap-engineered structurehaving nitrogen-containing material [silicon nitride] laterallysandwiched between two insulator oxides [silicon dioxide]), andtransistor channel material 35 (e.g., suitably doped polysilicon, etc.)in individual channel openings 26 along insulating-material tiers 12 andalong conductive material 30 in filled void space 28. Conductivematerial 30 may be laterally recessed (not shown) back from originalchannel openings 26 prior to deposition of charge-blocking material 32.

Referring to FIGS. 10 and 11, horizontally-elongated trenches 36 havebeen formed to extend elevationally into first material trenches 12(e.g., and conductive material 30), and solid material 38 has beenformed therein. Ideally, solid material 38 is insulative (e.g., silicondioxide) and also fills remaining volume of channel openings 26. In onesuch embodiment and as shown, trenches 36 and solid material 38 thereinhave been formed after forming channel openings 26 and transistorchannel material 35 therein. Alternately, such trenches and solidmaterial therein may be formed before forming transistor channelmaterial 35 and/or channel openings 26.

For example, and by way of example only, an alternate construction 10 ais shown in and described with reference to FIG. 12. Like numerals fromthe above-described embodiments have been used where appropriate, withsome construction differences being indicated with the suffix “a”. FIG.12 shows alternate example processing to that depicted by FIG. 4wherein, for example, trenches 36 and solid material 38 therein havebeen formed prior to forming channel openings 26 (not shown) andaccordingly any transistor channel material therein. For example,trenches 36 may be formed commensurate with forming of dummy-structureopenings 20, and with such openings 20 and trenches 36 beingsimultaneously filled with solid material 38. Any other attribute(s) oraspect(s) as shown and/or described herein with respect to otherembodiments may be used.

FIGS. 10 and 11 by way of example show fabrication being completed withrespect to formation of an array 15 of example transistors 40 (e.g.,charge-storage transistors), and which comprise an access line 42interconnecting multiple transistors 40 along, for example, a row orcolumn. Conductive material 30 in FIG. 11 as shown left and right oftrenches 36 and material 38 therein would comprise a separatelycontrollable/accessible access line 42 (not numerically designated inFIG. 10). Any other attribute(s) or aspect(s) as shown and/or describedherein with respect to other embodiments may be used.

Another example method used in forming an array ofelevationally-extending transistors is shown in and next described withreference to FIGS. 13-17 with respect to a construction 10 b. Likenumerals from the above-described embodiments have been used whereappropriate, with some construction differences being indicated with thesuffix “b” or with different numerals.

Referring to FIGS. 13 and 14, horizontally-elongated trenches 36 havebeen formed which extend elevationally into vertically-alternating tiers12 and 14.

Referring to FIGS. 15 and 16, solid material 38 has been formed withintrenches 36, with at least a laterally-outermost portion thereof alonglongitudinal sides 37 of individual trenches 36 being insulative.Elevationally-extending channel openings 26 have been formed intovertically-alternating tiers 12 and 14 and, in one embodiment, afterforming solid material 38 and laterally there-between.

Referring to FIG. 17, etchant has been flowed into channel openings 26with at least some (all being shown) of second material 18 (not shown assuch has been removed) of second-material tiers 14 being etchedtherewith selectively relative to first-material tiers 12 andselectively relative to solid material 38 to form void space 28elevationally between immediately-adjacent first-material tiers 12.Subsequent processing may occur as described above with respect to FIGS.6-11.

In any of the above-described embodiments, central portions of channelopenings 20 may be filled with solid insulator material or be hollow.Further, trenches 36 may individually comprise one or more hollowportions.

The FIGS. 13-17 method may result in an example finished construction ofan array of transistors that is devoid of any elevationally-extendingdummy structures laterally between trenches 36 and solid material 38therein. Alternately, elevationally-extending dummy structures may beformed that are laterally between trenches 36 and solid material 38therein in a finished construction of the transistor array in connectionwith the fabrication described above relative to FIGS. 13-17. Any otherattribute(s) or aspect(s) as shown and/or described herein with respectto other embodiments may be used.

An embodiment of the invention encompasses a method used in forming anarray (e.g., 15) of elevationally-extending transistors (e.g., 40). Suchcomprises forming vertically-alternating tiers (e.g., 12, 14) ofinsulating material (e.g., 16) and void space (e.g., 28 in FIG. 5) andin some embodiments regardless of predecessor construction or how orwhen such vertically-alternating tiers are formed. Individuallongitudinally-aligned channel openings (e.g., 26 in FIG. 5) extendelevationally through the insulating-material tiers and in someembodiments regardless of predecessor construction or how or when suchare formed.

The void-space tiers (e.g., 14) are filled with conductive material(e.g., 30) by flowing the conductive material or one or more precursorsthereof through the channel openings to into the void-space tiers. Suchfilling forms the conductive material elevationally along theinsulating-material tiers (e.g., 12) within the individual channelopenings. The conductive material is removed from being elevationallyalong the insulating-material tiers within the individual channelopenings after such act of filling. Transistor channel material (e.g.,35) is formed in the individual channel openings along theinsulating-material tiers and along the conductive material in thefilled void-space tiers after such removing of the conductive materialfrom being along the insulating-material tiers in the channel openings.

In one embodiment, horizontally-elongated trenches (e.g., 36) are formedelevationally into the insulating-material tiers 12 and solid material(e.g., 38) is formed therein. In one such embodiment, the trenches andthe solid material therein are formed after forming the individualchannel openings. In one embodiment, elevationally-extending dummystructures (e.g., 24) are formed through the insulating-material tiersthat are laterally between the trenches in a finished construction ofthe array.

In one embodiment, the trenches and the solid material therein areformed before forming the individual channel openings, and in one suchembodiment the solid material therein comprises transistor channelmaterial, for example as is described below.

Any other attribute(s) or aspect(s) as shown and/or described hereinwith respect to other embodiments may be used.

An embodiment of the invention comprises a method used in forming anarray (e.g., 15) of elevationally-extending transistors (e.g., 40). Suchincludes forming vertically-alternating tiers (e.g., 12, 14) ofinsulating material (e.g., 16) and void space (e.g., 28 in FIG. 5), andin some embodiments regardless of predecessor construction or how orwhen such vertically-alternating tiers of the insulating material andthe void space are formed. Individual longitudinally-aligned channelopenings (e.g., 26) are ultimately formed to extend elevationallythrough the insulating-material tiers (e.g., 12) and in some embodimentsregardless of predecessor construction or how or when such are formed.Horizontally-elongated trenches (e.g., 36) are ultimately formed whichextend elevationally through the insulating-material tiers, and in someembodiments regardless of predecessor construction or how or when suchare formed. The void-space tiers (e.g., 14) are filled with conductivematerial (e.g., 30) by flowing the conductive material or one or moreprecursors thereof through at least one of the channel openings or thetrenches into the void-space tiers. After filling the void-space tiers,transistor channel material (e.g., 35) is formed in the individualchannel openings along the insulating-material tiers and along theconductive material in the filled void-space tiers.

In one embodiment, the flowing is through the channel openings, in oneembodiment is through the trenches, and in one embodiment is throughboth. In one embodiment, the flowing is only through the channelopenings and is not through the trenches. In one such embodiment, thetrenches and the solid material formed therein are formed before flowingthe etchant through the channel openings. In an alternate suchembodiment, the trenches and solid material therein are formed afterflowing the etchant through the channel openings.

In one embodiment, the etchant is flowed only through the trenches andnot through the channel openings. In one such embodiment, the channelopenings and the solid material formed therein are formed after flowingthe etchant through the trenches. In an alternate such embodiment, thechannel openings and the solid material formed therein are formed beforeflowing the etchant through the trenches. In one embodiment, thetransistor channel material is formed in the trenches while forming thetransistor channel material in the individual channel openings and whichremains in the trenches in a finished construction of the array, forexample as is described below.

In one embodiment, elevationally-extending dummy-structure openings(e.g., 20) are formed through the insulating-material tiers beforeforming the void-space tiers. In one such embodiment, the trenches areformed before forming the void-space tiers. The transistor channelmaterial is formed in the dummy-structure openings and in the trencheswhile forming the transistor channel material in the individual channelopenings and which remains in the dummy-structure openings and in thetrenches in a finished construction of the transistor array, for exampleas is described below.

Any other attribute(s) or aspect(s) as shown and/or described hereinwith respect to other embodiments may be used.

An alternate example embodiment method used in forming an array ofelevationally-extending transistors is shown in and next described withreference to FIGS. 18-24 with respect to a construction 10 c. Likenumerals from the above-described embodiments have been used whereappropriate, with some construction differences being indicated with thesuffix “c” or with different numerals.

Referring to FIGS. 18 and 19, such an example method includes formingvertically-alternating tiers (e.g., 12, 14 c) of different compositionfirst material (e.g., 16) and second material (e.g., 30 c), with thefirst material being insulative and the second material beingconductive. Elevationally-extending dummy-structure openings (e.g., 20)are formed into the vertically-alternating tiers.Elevationally-extending channel openings (e.g., 26) are formed into thevertically-alternating tiers. Horizontally-elongated trenches (e.g., 36)are formed to extend elevationally into the vertically-alternatingtiers. Openings 20, openings 26, and trenches 36 may be formedseparately, in any order relative one another, formed simultaneouslywith respect to all three, formed simultaneously with respect to anytwo, etc.

Referring to FIGS. 20 and 21, multiple different composition of the samesolid materials (e.g., 32, 33, 34, 35) are simultaneously formed intoeach of the dummy structure openings, the channel openings, and thetrenches.

Referring to FIG. 22, the solid materials in the dummy-structureopenings and in the trenches have been elevationally recessed to formelevational recesses (e.g., 60) (e.g., by etching, with the solidmaterials in the channel openings being masked [not shown] during suchetching).

Referring to FIGS. 23 and 24, thereafter the elevational recesses arefilled with insulating material 65 (e.g., silicon nitride and/or silicondioxide). For example, such may be formed by deposition of material 65to fill elevational recesses 60, followed by polishing or etchingmaterial 65 back at least to elevationally-outermost surfaces of theelevationally-outermost insulating material tier.

Any other attribute(s) or aspect(s) as shown and/or described hereinwith respect to other embodiments may be used.

Another example method used in forming an array ofelevationally-extending transistors is shown in and next described withreference to FIGS. 25 and 26 with respect to a construction 10 d. Likenumerals from the above-described embodiments have been used whereappropriate, with some construction differences being indicated with thesuffix “d” or with different numerals.

In any of the above embodiments, elevationally-extendingthrough-array-via openings may be formed in addition to or in place ofdummy-structure openings. By way of example only, through-array-viaopenings 120 are shown in construction 10 d in place of dummy-structureopenings 20 in the above-described embodiments. Elevationally-extendingand electrically-operative (i.e., not “dummy”) through-array vias 124have been formed in individual through-array via openings 120. Vias 124are shown as comprising a conductive core 122 (e.g., metal material)having a radially-outermost insulative material 126 (e.g., silicondioxide and/or silicon nitride), with vias 124 remaining in a finishedconstruction of the array. Through-array-via openings 120 and vias 124may be formed at any time, for example, as described above with respectto the above-described embodiments with respect to dummy structureopenings 20 and dummy structures 24. Any other attribute(s) or aspect(s)as shown and/or described herein with respect to other embodiments maybe used.

In some embodiment, any one or more of the elevationally-extendingfeatures is formed to be vertical or within 10° of vertical.

In this document unless otherwise indicated, “elevational”, “higher”,“upper”, “lower”, “top”, “atop”, “bottom”, “above”, “below”, “under”,“beneath”, “up”, and “down” are generally with reference to the verticaldirection. “Horizontal” refers to a general direction (i.e., within 10degrees) along a primary substrate surface and may be relative to whichthe substrate is processed during fabrication, and vertical is adirection generally orthogonal thereto. Reference to “exactlyhorizontal” is the direction along the primary substrate surface (i.e.,no degrees there-from) and may be relative to which the substrate isprocessed during fabrication. Further, “vertical” and “horizontal” asused herein are generally perpendicular directions relative one anotherand independent of orientation of the substrate in three-dimensionalspace. Additionally, “elevationally-extending” and “extendingelevationally” refer to a direction that is angled away by at least 45°from exactly horizontal. Further, “extend(ing) elevationally” and“elevationally-extending” with respect to a field effect transistor arewith reference to orientation of the transistor's channel length alongwhich current flows in operation between the source/drain regions. Forbipolar junction transistors, “extend(ing) elevationally” and“elevationally-extending” are with reference to orientation of the baselength along which current flows in operation between the emitter andcollector.

Further, “directly above” and “directly under” require at least somelateral overlap (i.e., horizontally) of two statedregions/materials/components relative one another. Also, use of “above”not preceded by “directly” only requires that some portion of the statedregion/material/component that is above the other be elevationallyoutward of the other (i.e., independent of whether there is any lateraloverlap of the two stated regions/materials/components). Analogously,use of “under” not preceded by “directly” only requires that someportion of the stated region/material/component that is under the otherbe elevationally inward of the other (i.e., independent of whether thereis any lateral overlap of the two stated regions/materials/components).

Any of the materials, regions, and structures described herein may behomogenous or non-homogenous, and regardless may be continuous ordiscontinuous over any material which such overlie. Further, unlessotherwise stated, each material may be formed using any suitable oryet-to-be-developed technique, with atomic layer deposition, chemicalvapor deposition, physical vapor deposition, epitaxial growth, diffusiondoping, and ion implanting being examples.

Additionally, “thickness” by itself (no preceding directional adjective)is defined as the mean straight-line distance through a given materialor region perpendicularly from a closest surface of animmediately-adjacent material of different composition or of animmediately-adjacent region. Additionally, the various materials orregions described herein may be of substantially constant thickness orof variable thicknesses. If of variable thickness, thickness refers toaverage thickness unless otherwise indicated, and such material orregion will have some minimum thickness and some maximum thickness dueto the thickness being variable. As used herein, “different composition”only requires those portions of two stated materials or regions that maybe directly against one another to be chemically and/or physicallydifferent, for example if such materials or regions are not homogenous.If the two stated materials or regions are not directly against oneanother, “different composition” only requires that those portions ofthe two stated materials or regions that are closest to one another bechemically and/or physically different if such materials or regions arenot homogenous. In this document, a material, region, or structure is“directly against” another when there is at least some physical touchingcontact of the stated materials, regions, or structures relative oneanother. In contrast, “over”, “on”, “adjacent”, “along”, and “against”not preceded by “directly” encompass “directly against” as well asconstruction where intervening material(s), region(s), or structure(s)result(s) in no physical touching contact of the stated materials,regions, or structures relative one another.

Herein, regions-materials-components are “electrically coupled” relativeone another if in normal operation electric current is capable ofcontinuously flowing from one to the other, and does so predominately bymovement of subatomic positive and/or negative charges when such aresufficiently generated. Another electronic component may be between andelectrically coupled to the regions-materials-components. In contrast,when regions-materials-components are referred to as being “directlyelectrically coupled”, no intervening electronic component (e.g., nodiode, transistor, resistor, transducer, switch, fuse, etc.) is betweenthe directly electrically coupled regions-materials-components.

Additionally, “metal material” is any one or combination of an elementalmetal, a mixture or an alloy of two or more elemental metals, and anyconductive metal compound.

Use of “row” and “column” in this document is for convenience indistinguishing one series or orientation of lines from another series ororientation of lines and along which features have been or will beformed. “Row” and “column” are used synonymously with respect to anyseries of regions, components, and/or features independent of function.Regardless, the rows may be straight and/or curved and/or paralleland/or not parallel relative one another, as may be the columns.Further, the rows and columns may intersect relative one another at 90°or at one or more other angles.

In this document, a selective etch or removal is an etch or removalwhere one material is removed relative to another stated material ormaterials at a rate of at least 2.0:1.

In this document, a “dummy structure” refers to a structure which isused to mimic a physical property of another structure (e.g., presence,or load-carrying ability of an operative structure) and which maycomprise a circuit inoperable electrical dead end (e.g., is not part ofa current flow path of a circuit even if conductive). Openings in whichdummy structures are formed may be considered as “dummy-structureopenings”.

CONCLUSION

In some embodiments, a method used in forming an array ofelevationally-extending transistors comprises formingvertically-alternating tiers of insulating material and void space. Suchmethod includes forming (a) individual longitudinally-aligned channelopenings extending elevationally through the insulating-material tiers,and (b) horizontally-elongated trenches extending elevationally throughthe insulating-material tiers. The void-space tiers are filled withconductive material by flowing the conductive material or one or moreprecursors thereof through at least one of (a) and (b) to into thevoid-space tiers. After the filling, transistor channel material isformed in the individual channel openings along the insulating-materialtiers and along the conductive material in the filled void-space tiers.

In some embodiments, a method used in forming an array ofelevationally-extending transistors comprises formingvertically-alternating tiers of insulating material and void space.Individual longitudinally-aligned channel openings extend elevationallythrough the insulating-material tiers. The void-space tiers are filledwith conductive material by flowing the conductive material or one ormore precursors thereof through the channel openings to into thevoid-space tiers. The filling forms the conductive materialelevationally along the insulating-material tiers within individual ofthe channel openings. After the filling, the conductive material isremoved from being elevationally along the insulating-material tierswithin the individual channel openings. Transistor channel material isformed in the individual channel openings along the insulating-materialtiers and along the conductive material in the filled void-space tiersafter the removing.

In some embodiments, a method used in forming an array ofelevationally-extending transistors comprises formingvertically-alternating tiers of different composition first and secondmaterials, with the first material being insulative.Elevationally-extending dummy structures are formed through thevertically-alternating tiers. Elevationally-extending channel openingsare formed into the vertically-alternating tiers after forming the dummystructures. An etchant is flowed into the channel openings and at leastsome of the second material of the second-material tiers is etchedtherewith selectively relative to the first-material tiers andselectively relative to the dummy structures to form void spaceelevationally between immediately-adjacent of the first-material tiers.The void-space is filled with conductive material by flowing theconductive material or one or more precursors thereof through thechannel openings to into the void space. The filling forms theconductive material elevationally along the first-material tiers withinindividual of the channel openings. After filling the void space, theconductive material is removed from being elevationally along thefirst-material tiers within the individual channel openings. Transistorchannel material is in the individual channel openings along theinsulating-material tiers and along the conductive material in thefilled void space after the removing. Horizontally-elongated trenchesare formed to extend elevationally through the first-material tiers.Solid material is formed within said trenches.

In some embodiments, a method used in forming an array ofelevationally-extending transistors comprises formingvertically-alternating tiers of different composition first and secondmaterials, with the first material being insulative.Horizontally-elongated trenches are formed to extend elevationally intothe vertically-alternating tiers. Solid material is formed with saidtrenches. At least a laterally-outermost portion of the solid materialalong longitudinal sides of individual of the trenches is insulative.Elevationally-extending channel openings are formed into thevertically-alternating tiers after forming the solid material andlaterally between the trenches. An etchant is flowed into the channelopenings and at least some of the second material of the second-materialtiers is etched therewith selectively relative to the first-materialtiers and selectively relative to the solid material to form void spaceelevationally between immediately-adjacent of the first-material tiers.The void space is filled with conductive material by flowing theconductive material or one or more precursors thereof through thechannel openings to into the void space. The filling forms theconductive material elevationally along the first-material tiers withinindividual of the channel openings. The void space is filled withconductive material by flowing the conductive material or one or moreprecursors thereof through the channel openings to into the void space.The filling forms the conductive material elevationally along thefirst-material tiers within individual of the channel openings. Afterfilling the void space, the conductive material is removed from beingelevationally along the first-material tiers within the individualchannel openings. Transistor channel material is formed in theindividual channel openings along the insulating-material tiers andalong the conductive material in the filled void space after theremoving.

In some embodiments, a method used in forming an array ofelevationally-extending transistors comprises formingvertically-alternating tiers of different composition first and secondmaterials, with the first material being insulative and the secondmaterial being conductive. Elevationally-extending dummy-structureopenings are formed into the vertically-alternating tiers.Elevationally-extending channel openings are formed into thevertically-alternating tiers. Horizontally-elongated trenches are formedto extend elevationally into the vertically-alternating tiers. Multipledifferent composition of the same solid materials are simultaneouslyformed into each of the dummy structure openings, the channel openings,and the trenches. The solid materials in the dummy-structure openingsand in the trenches are elevationally recessed to form elevationalrecesses. Such recesses are filled with insulating material.

In compliance with the statute, the subject matter disclosed herein hasbeen described in language more or less specific as to structural andmethodical features. It is to be understood, however, that the claimsare not limited to the specific features shown and described, since themeans herein disclosed comprise example embodiments. The claims are thusto be afforded full scope as literally worded, and to be appropriatelyinterpreted in accordance with the doctrine of equivalents.

The invention claimed is:
 1. A method used in forming an array of elevationally-extending transistors, comprising: forming vertically-alternating tiers of insulating material and void space; forming (a) individual longitudinally-aligned channel openings extending elevationally through the insulating-material tiers, and (b) horizontally-elongated trenches extending elevationally through the insulating-material tiers; filling the void-space tiers with conductive material by flowing the conductive material or one or more precursors thereof through at least one of (a) and (b) to into the void-space tiers; and after the filling, forming transistor channel material in the individual channel openings along the insulating-material tiers and along the conductive material in the filled void-space tiers.
 2. The method of claim 1 wherein the flowing is through (a): the individual longitudinally-aligned channel openings that extend elevationally through the insulating-material tiers.
 3. The method of claim 1 wherein the flowing is only through (a): the individual longitudinally-aligned channel openings that extend elevationally through the insulating-material tiers, and the flowing is not through (b): the horizontally-elongated trenches that extend elevationally through the insulating-material tiers.
 4. The method of claim 3 comprising both forming (b): the horizontally-elongated trenches that extend elevationally through the insulating-material tiers and forming solid material within said trenches after the flowing through (a).
 5. The method of claim 3 comprising both forming (b): the horizontally-elongated trenches that extend elevationally through the insulating-material tiers and forming solid material within said trenches before the flowing through (a).
 6. The method of claim 1 comprising: forming elevationally-extending through-array-via openings through the insulating-material tiers before forming the void-space tiers; and forming an electrically-operative through-array via in individual of the through-array-via openings which remains in a finished construction of the array.
 7. The method of claim 1 wherein each of the trenches and the channel openings are formed to be vertical or within 10° of vertical.
 8. The method of claim 1 wherein the flowing is through (b): the horizontally-elongated trenches that extend elevationally through the insulating-material tiers.
 9. The method of claim 1 wherein the flowing is through (a): the individual longitudinally-aligned channel openings that extend elevationally through the insulating-material tiers and the flowing is through (b): the horizontally-elongated trenches that extend elevationally through the insulating-material tiers.
 10. The method of claim 1 wherein the flowing is only through (b): the horizontally-elongated trenches that extend elevationally through the insulating-material tiers, and the flowing is not through (a): the individual longitudinally-aligned channel openings that extend elevationally through the insulating-material tiers.
 11. The method of claim 10 comprising both forming (a): the individual longitudinally-aligned channel openings that extend elevationally through the insulating-material tiers and forming solid material within said channel openings after the flowing through (b).
 12. The method of claim 10 comprising both forming (a): the individual longitudinally-aligned channel openings that extend elevationally through the insulating-material tiers and forming solid material within said channel openings before the flowing through (b).
 13. The method of claim 1 comprising forming the transistor channel material in the trenches while forming the transistor channel material in the individual channel openings and which remains in the trenches in a finished construction of the array.
 14. The method of claim 1 comprising: forming elevationally-extending dummy-structure openings through the insulating-material tiers before forming the void-space tiers; forming the trenches before forming the void-space tiers; and forming the transistor channel material in the dummy-structure openings and in the trenches while forming the transistor channel material in the individual channel openings and which remains in the dummy-structure openings and in the trenches in a finished construction of the array.
 15. The method of claim 1 comprising forming charge- passage material in the individual channel openings along the insulating- material tiers and along the conductive material in the filled void-space tiers before forming the transistor channel material.
 16. The method of claim 15 comprising forming the transistor channel material directly along the charge-passage material.
 17. The method of claim 15 comprising forming a charge-blocking material and at least one of a charge-storage material or a charge-trapping material along the insulating-material tiers and along the conductive material in the filled void-space tiers before forming the charge- passage material.
 18. A method used in forming an array of elevationally-extending transistors, comprising: forming vertically-alternating tiers of insulating material and void space, individual longitudinally-aligned channel openings extending elevationally through the insulating-material tiers; filling the void-space tiers with conductive material by flowing the conductive material or one or more precursors thereof through the channel openings to into the void-space tiers, the filling forming the conductive material elevationally along the insulating-material tiers within individual of the channel openings; after the filling, removing the conductive material from being elevationally along the insulating-material tiers within the individual channel openings; and forming transistor channel material in the individual channel openings along the insulating-material tiers and along the conductive material in the filled void-space tiers after the removing.
 19. The method of claim 18 comprising forming horizontally-elongated trenches extending elevationally through the insulating-material tiers and forming solid material within said trenches.
 20. The method of claim 19 comprising forming elevationally-extending dummy structures through the insulating-material tiers that are laterally between the trenches and solid material therein in a finished construction of the array.
 21. The method of claim 19 comprising forming electrically-operative elevationally-extending through-array vias through the insulating-material tiers that are laterally between the trenches and solid material therein in a finished construction of the array.
 22. The method of claim 19 wherein the trenches and the solid material therein are formed after forming the individual channel openings.
 23. The method of claim 19 wherein the trenches and the solid material therein are formed before forming the individual channel openings.
 24. The method of claim 23 wherein the solid material comprises the transistor channel material.
 25. A method used in forming an array of elevationally-extending transistors, comprising: forming vertically-alternating tiers of different composition first and second materials, the first material being insulative; forming elevationally-extending dummy structures through the vertically-alternating tiers; forming elevationally-extending channel openings into the vertically-alternating tiers after forming the dummy structures; flowing an etchant into the channel openings and etching therewith at least some of the second material of the second-material tiers selectively relative to the first-material tiers and selectively relative to the dummy structures to form void space elevationally between immediately-adjacent of the first-material tiers; filling the void space with conductive material by flowing the conductive material or one or more precursors thereof through the channel openings to into the void space, the filling forming the conductive material elevationally along the first-material tiers within individual of the channel openings; after filling the void space, removing the conductive material from being elevationally along the first-material tiers within the individual channel openings; forming transistor channel material in the individual channel openings along the insulating-material tiers and along the conductive material in the filled void space after the removing; forming horizontally-elongated trenches extending elevationally through the first-material tiers; and forming solid material within said trenches.
 26. The method of claim 25 wherein ratio of a total number of the channel openings to a total number of the dummy structures is from 20:1 to 4:1.
 27. The method of claim 25 wherein the trenches and solid material therein are formed before forming the channel openings and transistor channel material therein.
 28. The method of claim 25 wherein the trenches and solid material therein are formed after forming the channel openings and transistor channel material therein.
 29. The method of claim 25 comprising: forming horizontally-elongated trenches extending elevationally through the first-material tiers; and forming solid material within said trenches. 